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 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769
MMBD7000
Features
* * * Low Current Leakage Low Cost Small Outline Surface Mount Package
C/A Pin Configuration Top View
350mW 100Volt Dual Switching Diode
SOT-23
A D
M5C
A C
* * *
Maximum Ratings
Operating Temperature: -55C to +150C Storage Temperature: -55C to +150C Maximum Thermal Resistance; 357K/W Junction To Ambient
F E
C
B
Electrical Characteristics @ 25C Unless Otherwise Specified
Reverse Voltage Average Rectified Output Current Power Dissipation Peak Forward Surge Current Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance Reverse Recovery Time VR IO PTOT IFSM 100V 150mA 350mW 1.0A
G
H
J
K DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37
t=1s,Non-Repetitive
VF
820mV
IR
1.0A 100A 2pF
IFM = 10mA; TJ = 25C* VR=50Volts TJ = 25C TJ = 125C
DIM A B C D E F G H J K
MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020
MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51
NOTE
Suggested Solder Pad Layout
.031 .800 .035 .900 .079 2.000 inches mm
Measured at 1.0MHz, VR=0V Trr 4nS IF=10mA VR = 0V RL=500 *Pulse test: Pulse width 300 sec, Duty cycle 2%
CJ
.037 .950 .037 .950
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MMBD7000
IF, INSTANTANEOUS FORWARD CURRENT (mA)
1000
10,000
IR, LEAKAGE CURRENT (nA)
100
1000
10
100
1.0
10
0.1
VR = 20V
0.01 0 1 2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Forward Characteristics
1
0
100
200
Tj, JUNCTION TEMPERATURE (C) Fig. 2 Leakage Current vs Junction Temperature
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